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Marco Saraniti

Marco Saraniti

Professor, School of Electrical, Computer and Energy Engineering, Ira A. Fulton Schools of Engineering

Marco.Saraniti@asu.edu

School of Electrical, Computer, and Energy Engineering, BYENG 640
Arizona State University
PO Box 875706
Tempe, AZ 85287-5706

Titles

  • Senior Sustainability Scientist, Global Institute of Sustainability and Innovation
  • Professor, School of Electrical, Computer and Energy Engineering, Ira A. Fulton Schools of Engineering

Biography

Dr. Saraniti joined the faculty of the School of Electrical, Computer, and Energy Engineering in August 2007. Heis the author or coauthor of more than 90 publications, four book chapters, and four technical reports. His current research focuses mainly on computational electronics applied to the simulation of semiconductor devices and biological structures. His recent scientific work covers the following fields: the development of Monte Carlo and cellular automaton techniques for 2-D and 3-D simulation of semiconductordevices, simulation and engineering of semiconductor devices, and the development of numerical methods for the modeling and simulation of membrane proteins.

Education

  • PhD, Technische Universitaet Muenchen, 1996
  • BS, University of Modena, 1991

Expertise

Journal Articles

2017

Sabatti, F. F., S. M. Goodnick and M. Saraniti. 2017. Simulation of phonon transport in semiconductors using a population-dependent many-body cellular Monte Carlo approach. Journal of Heat Transfer 139(3):032002. DOI: 10.1115/1.4035042. (link )

2016

Hathwar, R., M. Saraniti and S. M. Goodnick. 2016. Modeling of multi-band drift in nanowires using a full band Monte Carlo simulation. Journal of Applied Physics 120(4):044307. DOI: 10.1063/1.4959881. (link )

2012

Goodnick, S. M. and M. Saraniti. 2012. Modeling and simluation of terahertz devices. IEEE Microwave Magazine 13(7):36-44. DOI: 10.1109/MMM.2012.2216098. (link )

2011

Guerra, D., F. Alessio Marino, S. M. Goodnick, D. K. Ferry and M. Saraniti. 2011. Extraction of gate capacitance of high-frequency and high-power GaN HEMTs by means of cellular Monte Carlo simulations. International Journal of High Speed Electronics and Systems 20(3):423-430. (link )

Guerra, D., M. Saraniti, D. K. Ferry, S. M. Goodnick and F. Alessio Marino. 2011. Carrier dynamics investigations on passivation dielectric constant and RF performance of millimeter-wave [power GaN HEMTs. IEEE Transactions on Electron Devices 58(11):3876-2884. DOI: 10.1109/TED.2011.2164407. (link )

2010

Alessio Marino, F., N. Faralli, T. Palacios, D. K. Ferry, S. M. Goodnick and M. Saraniti. 2010. Effects of threading dislocations on AlGaN/GaN high-electron mobility transistors. IEEE Transactions on Electron Devices 57(1):353-360. DOI: 10.1109/TED.2009.2035024. (link )

Alessio Marino, F., D. Guerra, S. Goodnick, D. Ferry and M. Saraniti. 2010. RF and DC characterization of state‐of‐the‐art GaN HEMT devices through cellular Monte Carlo simulations. Physica Status Solidi C 7(10):2445-2449. DOI: 10.1002/pssc.200983887. (link )

Alessio Marino, F., M. Saraniti, N. Faralli, D. K. Ferry, S. M. Goodnick and D. Guerra. 2010. Emerging N-face GaN HEMT technology: A cellular Monte Carlo study. IEEE Transactions on Electron Devices 57(10):2579-2586. DOI: 10.1109/TED.2010.2058791. (link )

Guerra, D., R. Akis, F. Alessio Marino, D. K. Ferry, S. M. Goodnick and M. Saraniti. 2010. Aspect ratio impact on RF and DC performance of state-of-the-art short-channel GaN and InGaAs HEMTs. IEEE Electron Device Letters 31(11):1217-1219. DOI: 10.1109/LED.2010.2066954. (link )

Guerra, D., M. Saraniti, N. Faralli, D. K. Ferry, S. M. Goodnick and F. Alessio Marino. 2010. Comparison of N- and Ga-face GaN HEMTs through cellular Monte Carlo simulations. IEEE Transactions on Electron Devices 57(12):3348-3354. DOI: 10.1109/TED.2010.2076151. (link )

2009

Akis, R., N. Faralli, D. K. Ferry, S. M. Goodnick, K. A. Phatak and M. Saraniti. 2009. Ballistic transport in InP-based HEMTs. IEEE Transactions on Electron Devices 56(12):2935-2944. DOI: 10.1109/TED.2009.2033167. (link )

Yamakawa, S., R. Akis, N. Faralli, M. Saraniti and S. M. Goodnick. 2009. Rigid ion model of high field transport in GaN. Journal of Physics: Condensed Matter 21(12):174206. DOI: 10.1088/0953-8984/21/17/174206. (link )

2008

Akis, R., J. S. Ayubi-Moak, N. Faralli, D. K. Ferry, S. M. Goodnick and M. Saraniti. 2008. The upper limit of the cutoff frequency in ultrashort gate-length InGaAs/InAlAs HEMTs: A new definition of effective gate length. IEEE Electron Device Letters 29(4):306-308. DOI: 10.1109/LED.2008.918391. (link )

Akis, R., J. S. Ayubi-Moak, D. K. Ferry, S. M. Goodnick, N. Faralli and M. Saraniti. 2008. Full-band cellular Monte Carlo simulatins of terahertz high electron mobility transistors. Journal of Physics: Condense Matter 20(38):384201. DOI: 10.1088/0953-8984/20/38/384201. (link )

Ayubi-Moak, J. S., R. Akis, M. Saraniti, D. K. Ferry and S. M. Goodnick. 2008. Hot electron effects in ultra‐short gate length InAs/InAlAs HEMTs. Physica Status Solidi C 5(1):135-138. DOI: 10.1002/pssc.200776577. (link )

2007

Ayubi-Moak, J. S., D. K. Ferry, S. M. Goodnick, R. Akis and M. Saraniti. 2007. Simulation of ultrasubmicrometer-gate In0.52Al0.48As/In0.75Ga0.25AsIn0.52Al0.48As/InP pseudomorphic HEMTs using a full-band Monte Carlo simulator. IEEE Transactions on Electron Devices 54(9):2327-2338. DOI: 10.1109/TED.2007.902902. (link )

2006

Beysserie, S., J. Branlard, S. Aboud, S. M. Goodnick and M. Saraniti. 2006. Comparative analysis of SOI and GOI MOSFETs. IEEE Transactions on Electron Devices 53(10):2545-2550. DOI: 10.1109/TED.2006.882272. (link )

2005

Yamakawa, S., S. M. Goodnick, J. Branlard and M. Saraniti. 2005. Frequency analysis of GaN MESFETs using full‐band cellular Monte Carlo. Physical Status Solidi C 2(7):2573-2576. DOI: 10.1002/pssc.200461525. (link )

2004

Aboud, S., M. Saraniti, S. Goodnick, A. Brodschelm and A. Leitenstorfer. 2004. Full-band Monte Carlo simulations of photo excitation in silicon diode structures. Semiconductor Science and Technology 19(4):S301-S303. DOI: 10.1088/0268-1242/19/4/101. (link )

Beysserie, S., S. Aboud, S. Goodnick, T. Thornton and M. Saraniti. 2004. Full‐band particle‐based simulation of SOI and GOI MOSFETs. Physica Status Solidi b 241(10):297-2302. DOI: 10.1002/pssb.200404940. (link )

Goodnick, S. M., M. Saraniti, D. Vasileska and S. Aboud. 2004. Particle-based methods in computational electronics. IEEE Potentials 23(5):12-16. DOI: 10.1109/MP.2004.1301239. (link )

Yamakawa, S., S. Aboud, M. Saraniti and S. M. Goodnick. 2004. Influence of electron-phonon interaction on electron transport in wurtzite GaN. Semiconductor Science and Technology 19(4):5475. DOI: 10.1088/0268-1242/19/4/156. (link )

2003

Goryll, M., S. Wilk, G. M. Laws, T. Thornton, S. Goodnick, M. Saraniti and R. S. Eisenberg. 2003. Silicon-based ion channel sensor. Superlattices and Microstructures 34(3-6):451-457. DOI: 0.1016/j.spmi.2004.03.041. (link )

Saraniti, M., J. Tang, S. M. Goodnick and S. J. Wigger. 2003. Numerical challenges in particle-based approaches for the simulation of semiconductor devices. Mathematics and Computers in Simulation 62(3-6):501-508. DOI: 10.1016/S0378-4754(02)00229-X. (link )

Wigger, S., M. Saraniti, S. M. Goodnick and A. Leitenstorfer. 2003. Fullband particle-based simulation of high-field transient transport in III-V semidonctors. Journal of Computational Eletronics 1:475-480. DOI: 10.1023/A:1022945122145. (link )

2002

Saraniti, M., Y. Hu and S. M. Goodnick. 2002. Particle-based full-band approach for fast simulation of charge transport in Si, GaAs, and InP. VLSI Design 15:Art. 437608. DOI: 10.1080/1065514021000012354. (link )

Saraniti, M., Y. Hu, S. M. Goodnick and S. J. Wigger. 2002. Overshoot velocity in ultra-broadband THz studies in GaAs and InP. Physica B: Condensed Matter 314(1-4):162-165. DOI: 10.1016/S0921-4526(01)01377-1. (link )

Saraniti, M., J. Tang, S. M. Goodnick and S. Wigger. 2002. Parallel approaches for particle-based simulation of charge transport in semiconductors. Journal of Computational Electronics 1:215-218. DOI: 10.1023/A:1020777508605. (link )

2000

Saraniti, M. and S. M. Goodnick. 2000. Hybrid fullband cellular automaton/Monte Carlo approach for fast simulation of charge transport in semiconductors. IEEE Transactions on Electron Devices 47(10):1909-1916. DOI: 10.1109/16.870571. (link )

1998

Saraniti, M., G. Zandler, G. Formicone, S. Wigger and S. Goodnick. 1998. Cellular automata simulation of nanometer scale MOSFETs. Seminconductor Science and Technology 13:A177. DOI: 10.1088/0268-1242/13/8A/050. (link )

1995

Saraniti, M., G. Zandler, G. Formicone and S. M. Goodnick. 1995. Cellular automata studies of vertical silicon devices. Computational Electronics 8:Art. 089897. DOI: 10.1155/1998/89897. (link )

1989

Wigger, S. J., S. M. Goodnick and M. Saraniti. 1989. Full-band CA/Monte Carlo modeling of ultrasmall FETs. Superlattices and Microstructures 27(5-6):417-420. DOI: 10.1006/spmi.2000.0860. (link )

Book Chapters

2008

Goodnick, S. M. and M. Saraniti. 2008. Cellular Monte Carlo simulation of high field transport in semiconductor devices. Pp. 21-29 In: Ryzhii, M. and V. Ryzhii eds., Physics and Modeling of Tera- and Nano-Devices. Vol 47. DOI: 10.1142/9789812779052_0003. ISBN: 978-9812779045. (link )

Conference Papers

2008

Akis, R., J. S. Ayubi-Moak, N. Faralli, S. M. Goodnick, D. K. Ferry and M. Saraniti. 2008. Simulating pseudomorphic HEMTs: Optimizing performance to achieve multi-terahertz operating frequencies. 2008 Device Research Conference. Device Research Conference, 2008. Santa Barbara, CA.