- Senior Global Futures Scientist, Julie Ann Wrigley Global Futures Laboratory
- Professor, Department of Physics, College of Liberal Arts and Sciences
Professor Ponce's research group is involved in the study of the microscopic properties of semiconductors materials. The atomic arrangement at extended defects (dislocations) and interfaces is analyzed using lattice-imaging techniques (transmission electron microscopy) with resolutions below 0.2nm, and diffraction contrast imaging techniques. The electronic properties are studied using electron beam induced current imaging. Variations of the electrostatic potential are measured using electron holography in the transmission electron microscopy. Optical transitions are observed using cathodoluminescence spectroscopic imaging.
An important area of interest is the physics of nitride semiconductors. These are GaN-based materials used in light emitting devices, and include InGaN and AlGaN alloys used for visible and ultraviolet LEDs and laser diodes. This research is being supported by the Department of Energy, Nichia Corporation, and the VIGIL Program of DARPA.
- PhD, Materials Science and Engineering, Stanford University, 1981
- MS, Solid State Physics, University of Maryland, 1975
- BS, Physics, Universidad Nacional de Ingenieria, Lima, Peru, 1971
Williams, J. J., H. McFavilen, A. M. Fischer, D. Ding, S. Young, E. Vadiee, F. A. Ponce, C. Arena, C. Honsberg and S. M. Goodnick. 2017. Refractory Inx Ga1-x N solar cells for high-temperative applications. IEEE Journal of Photovoltaics 7(6):1646-1652. DOI: 10.1109/JPHOTOV.2017.2756057. (link )
Zhao, S., J. Gao, S. Wang, H. Xie, F. A. Ponce, S. M. Goodnick and S. Chowdhury. 2017. Stability of alloyed and nonalloyed ohmic contacts to n-type GaN at high temperature in air. Japanese Journal of Applied Physics 56(12):126502. DOI: 10.7567/JJAP.56.126502. (link )
Zhao, S., H. McFavilen, S. Wang, F. A. Ponce, C. Arena, S. M. Goodnick and S. Chowdhury. 2016. Temperature dependence and high-temperature stability of the annealed Ni/Au ohmic contact to i-type GaN in air. Journal of Electronic Materials 45:2087-2091. DOI: 10.1007/s11664-015-4278-3. (link )