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Stephen Goodnick

Stephen Goodnick

Deputy Director, LightWorks®, Global Institute of Sustainability and Innovation

Stephen.Goodnick@asu.edu

480-965-9572

School of Electrical, Computer and Energy Engineering
Arizona State University
PO Box 875706
Tempe, AZ 85287-5706

Titles

  • Senior Global Futures Scientist, Julie Ann Wrigley Global Futures Laboratory
  • Deputy Director, LightWorks®, Global Institute of Sustainability and Innovation
  • Professor, School of Electrical, Computer and Energy Engineering, Ira A. Fulton Schools of Engineering

Biography

Stephen M. Goodnick is a professor of electrical engineering in the Ira A. Fulton Schools of Engineering and the deputy director of ASU LightWorks® in the Global Institute of Sustainability and Innovation.

He received his doctoral degree in electrical engineering from Colorado State University, Fort Collins, in 1983. He was a visiting scholar at the University of Modena, Italy, and an Alexander von Humboldt Fellow with the Technical University of Munich, Munich, Germany, in 1985 and 1986, respectively. He served as Chair and Professor of Electrical Engineering with Arizona State University, Tempe, from 1996 to 2005. He served as associate vice president for research for Arizona State University from 2006 to 2008, and presently serves as deputy director of ASU Lightworks, and is Hans Fischer Senior Fellow with the Institute for Advanced Studies at the Technical University of Munich.

Professionally, he served as president (2012-2013) of the IEEE Nanotechnology Council, and served as president of IEEE Eta Kappa Nu Electrical and Computer Engineering Honor Society Board of Governors, 2011-2012.

Some of his main research contributions include analysis of surface roughness at the Si/SiO2 interface, Monte Carlo simulation of ultrafast carrier relaxation in quantum confined systems, global modeling of high frequency and energy conversion devices, full-band simulation of semiconductor devices, transport in nanostructures, and fabrication and characterization of nanoscale semiconductor devices. He has published over 400 journal articles, books, book chapters, and conference proceeding, and is a fellow of IEEE (2004) for contributions to carrier transport fundamentals and semiconductor devices.

Education

  • PhD, Electrical Engineering, Colorado State University, 1983
  • MS, Electrical Engineering, Colorado State University, 1979
  • BS, Engineering Science, Trinity University, 1977

Expertise

Journal Articles

2018

Dutta, M., S. Mandal, R. Hathwar, A. M. Fischer, F. M. Koeck, R. Nemanich, S. M. Goodnick and S. Chowdhury. 2018. Determination of minority carrier lifetime of holes in diamond p-i-n diodes using reverse recovery method. IEEE Electron Device Letters 39(4):552-555. DOI: 10.1109/LED.2018.2804978. (link )

2017

Sabatti, F. F., S. M. Goodnick and M. Saraniti. 2017. Simulation of phonon transport in semiconductors using a population-dependent many-body cellular Monte Carlo approach. Journal of Heat Transfer 139(3):032002. DOI: 10.1115/1.4035042. (link )

Saremi, M., R. Hathwar, M. Dutta, F. A. Koeck, R. J. Nemanich, S. Chowdhury and S. M. Goodnick. 2017. Analysis of the reverse I-V characteristics of diamond-based PIN diodes. Applied Physics Letters 111(4):043507. DOI: 10.1063/1.4986756. (link )

Toprasertpong, K., S. M. Goodnick, Y. Nakano and M. Sugiyama. 2017. Effective mobility for sequential carrier transport in multiple quantum well structures. Physical Review B 96:075441. DOI: 10.1103/PhysRevB.96.075441. (link )

Williams, J. J., H. McFavilen, A. M. Fischer, D. Ding, S. Young, E. Vadiee, F. A. Ponce, C. Arena, C. Honsberg and S. M. Goodnick. 2017. Refractory Inx Ga1-x N solar cells for high-temperative applications. IEEE Journal of Photovoltaics 7(6):1646-1652. DOI: 10.1109/JPHOTOV.2017.2756057. (link )

Zhao, S., J. Gao, S. Wang, H. Xie, F. A. Ponce, S. M. Goodnick and S. Chowdhury. 2017. Stability of alloyed and nonalloyed ohmic contacts to n-type GaN at high temperature in air. Japanese Journal of Applied Physics 56(12):126502. DOI: 10.7567/JJAP.56.126502. (link )

2016

Dutta, M., F. M. Koeck, R. Hathwar, S. M. Goodnick, R. Nemanich and S. Chowdhury. 2016. Demonstration of diamond-based Schottky p-i-n diode with blocking voltage >500 V. IEEE Electron Device Letters 37(9):1170-1173. DOI: 10.1109/LED.2016.2592500. (link )

Hathwar, R., M. Dutta, F. A. Koeck, R. Nemanich, S. Chowdhury and S. M. Goodnick. 2016. Temperature dependent simulation of diamond depleted Schottky PIN diodes. Journal of Applied Physics 119(22):225703. DOI: 10.1063/1.4953385. (link )

Hathwar, R., M. Saraniti and S. M. Goodnick. 2016. Modeling of multi-band drift in nanowires using a full band Monte Carlo simulation. Journal of Applied Physics 120(4):044307. DOI: 10.1063/1.4959881. (link )

Zhao, S., H. McFavilen, S. Wang, F. A. Ponce, C. Arena, S. M. Goodnick and S. Chowdhury. 2016. Temperature dependence and high-temperature stability of the annealed Ni/Au ohmic contact to i-type GaN in air. Journal of Electronic Materials 45:2087-2091. DOI: 10.1007/s11664-015-4278-3. (link )

2015

Chandra, N., C. Tracy, J. Cho, S. T. Picraux, R. Hathwar and S. M. Goodnick. 2015. Vertically grown Ge nanowire Schottky diodes on Si and Ge substrates. Journal of Applied Pysics 118:024301. DOI: 10.1063/1.4923407. (link )

Muralidharan, P., D. Vasileska, S. M. Goodnick and S. Bowden. 2015. A kinetic Monte Carlo study of defect assisted transport in silicon heterojunction solar cells. Physica Status Soliidi C 12(9-11):1198-1200. DOI: 10.1002/pssc.201510071. (link )

2013

Padmanabhan, B., D. Vasileska and S. M. Goodnick. 2013. Current degradation due to electromechanical coupling in GaN HEMT's. Microelectronics Journal 44(7):592-597. DOI: 10.1016/j.mejo.2013.03.009. (link )

Vasileska, D., G. Klimeck, A. Magana and S. M. Goodnick. 2013. Tool-based curricula and visual learning. Electronics 17(2):95-104. DOI: 10.7251/ELS1317095V. (link )

Williams, J. J., T. L. Williamson, M. A. Hoffbauer, A. M. Fischer, S. M. Goodnick, N. Faleev, K. Ghosh and C. Honsberg. 2013. Inducing a junction in n-type InxGa(1−x)N. Journal of Vacuum Science & Technology B 31(3):03C127. DOI: 10.1116/1.4797489. (link )

Zhou, L., E. Dimakis, R. Hathwar, T. Aoki, D. J. Smith, T. D. Moustakas, S. M. Goodnick and M. R. McCartney. 2013. Measurement and effects of polarization fields on one-monolayer-thick InN/GaN multiple quantum wells. Physical Review B 88(12-15):125310. DOI: 10.1103/PhysRevB.88.125310. (link )

2012

Goodnick, S. M. and M. Saraniti. 2012. Modeling and simluation of terahertz devices. IEEE Microwave Magazine 13(7):36-44. DOI: 10.1109/MMM.2012.2216098. (link )

Honsberg, C. and S. M. Goodnick. 2012. Realizing terawatt-scale solar electricity:Nanotechnology-enabled physical mechanisms and material properties. IEEE Nanotechnollogy Magazine 6(2):6-14. DOI: 10.1109/MNANO.2012.2192652. (link )

Raleva, K., D. Vasileska, A. Hossain, S. Yoo and S. M. Goodnick. 2012. Study of self-heating effects in SOI and conventional MOSFETs with electro-thermal particle-based device simulator. Journal of Computational Electronics 11:106-117. DOI: 10.1007/s10825-012-0384-0. (link )

Vasileska, D., K. Raleva, A. Hossain and S. M. Goodnick. 2012. Current progress in modeling self-heating effects in FD SOI devices and nanowire transistors. Journal of Computational Electronics 11:238-248. DOI: 10.1007/s10825-012-0404-0. (link )

2011

Guerra, D., F. Alessio Marino, S. M. Goodnick, D. K. Ferry and M. Saraniti. 2011. Extraction of gate capacitance of high-frequency and high-power GaN HEMTs by means of cellular Monte Carlo simulations. International Journal of High Speed Electronics and Systems 20(3):423-430. (link )

Guerra, D., M. Saraniti, D. K. Ferry, S. M. Goodnick and F. Alessio Marino. 2011. Carrier dynamics investigations on passivation dielectric constant and RF performance of millimeter-wave [power GaN HEMTs. IEEE Transactions on Electron Devices 58(11):3876-2884. DOI: 10.1109/TED.2011.2164407. (link )

2010

Alessio Marino, F., N. Faralli, T. Palacios, D. K. Ferry, S. M. Goodnick and M. Saraniti. 2010. Effects of threading dislocations on AlGaN/GaN high-electron mobility transistors. IEEE Transactions on Electron Devices 57(1):353-360. DOI: 10.1109/TED.2009.2035024. (link )

Alessio Marino, F., D. Guerra, S. Goodnick, D. Ferry and M. Saraniti. 2010. RF and DC characterization of state‐of‐the‐art GaN HEMT devices through cellular Monte Carlo simulations. Physica Status Solidi C 7(10):2445-2449. DOI: 10.1002/pssc.200983887. (link )

Alessio Marino, F., M. Saraniti, N. Faralli, D. K. Ferry, S. M. Goodnick and D. Guerra. 2010. Emerging N-face GaN HEMT technology: A cellular Monte Carlo study. IEEE Transactions on Electron Devices 57(10):2579-2586. DOI: 10.1109/TED.2010.2058791. (link )

Ashok, A., D. Vasileska, O. L. Hartin and S. M. Goodnick. 2010. Electrothermal Monte Carlo simulation of GaN HEMTs including electron-electron interactions. IEEE Transactions on Electron Devices 57(3):562-570. DOI: 10.1109/TED.2009.2038585. (link )

Guerra, D., R. Akis, F. Alessio Marino, D. K. Ferry, S. M. Goodnick and M. Saraniti. 2010. Aspect ratio impact on RF and DC performance of state-of-the-art short-channel GaN and InGaAs HEMTs. IEEE Electron Device Letters 31(11):1217-1219. DOI: 10.1109/LED.2010.2066954. (link )

Guerra, D., M. Saraniti, N. Faralli, D. K. Ferry, S. M. Goodnick and F. Alessio Marino. 2010. Comparison of N- and Ga-face GaN HEMTs through cellular Monte Carlo simulations. IEEE Transactions on Electron Devices 57(12):3348-3354. DOI: 10.1109/TED.2010.2076151. (link )

Vasileska, D., A. Hossain, K. Raleva and S. M. Goodnick. 2010. The role of the source and drain contacts on self-heating effect in nanowire transistors. Journal of Computational Electronics 9(3-4):180-186. DOI: 10.1007/s10825-010-0334-7. (link )

Vasileska, D., K. Raleva and S. M. Goodnick. 2010. Electrothermal studies of FD SOI devices that utilize a new theoretical model for the temperature and thickness dependence of the thermal conductivity. IEEE Transactions on Electron Devices 57(3):726-728. DOI: 10.1109/TED.2009.2039526. (link )

2009

Akis, R., N. Faralli, D. K. Ferry, S. M. Goodnick, K. A. Phatak and M. Saraniti. 2009. Ballistic transport in InP-based HEMTs. IEEE Transactions on Electron Devices 56(12):2935-2944. DOI: 10.1109/TED.2009.2033167. (link )

Ashok, A., D. Vasileska, S. M. Goodnick and O. L. Hartin. 2009. Importance of the gate-dependent polarization charge on the operation of GaN HEMTs. IEEE Transactions on Electron Devices 56(5):998-1006. DOI: 10.1109/TED.2009.2015822. (link )

Huang, L., Y. Lai, D. K. Ferry, R. Akis and S. M. Goodnick. 2009. Transmission and scarring in graphene quantum dots. Journal of Physics: Condensed Matter 21(34):344203. DOI: 10.1088/0953-8984/21/34/344203. (link )

Huang, L., Y. Lai, D. K. Ferry, S. M. Goodnick and R. Akis. 2009. Relativistic quantum scars. Physical Review Letters 103:054101. DOI: 10.1103/PhysRevLett.103.054101. (link )

Vasileska, D., K. Raleva and S. M. Goodnick. 2009. Self-heating effects in nanoscale FD SOI devices: The role of the substract, boundary conditions at various interfaces, and the dielectric material type for the BOX. IEEE Transactions on Electron Devices 56(12):3064-3071. DOI: 10.1109/TED.2009.2032615. DOI: https://ieeexplore.ieee.org/document/5306154.

Yamakawa, S., R. Akis, N. Faralli, M. Saraniti and S. M. Goodnick. 2009. Rigid ion model of high field transport in GaN. Journal of Physics: Condensed Matter 21(12):174206. DOI: 10.1088/0953-8984/21/17/174206. (link )

2008

Akis, R., J. S. Ayubi-Moak, N. Faralli, D. K. Ferry, S. M. Goodnick and M. Saraniti. 2008. The upper limit of the cutoff frequency in ultrashort gate-length InGaAs/InAlAs HEMTs: A new definition of effective gate length. IEEE Electron Device Letters 29(4):306-308. DOI: 10.1109/LED.2008.918391. (link )

Akis, R., J. S. Ayubi-Moak, D. K. Ferry, S. M. Goodnick, N. Faralli and M. Saraniti. 2008. Full-band cellular Monte Carlo simulatins of terahertz high electron mobility transistors. Journal of Physics: Condense Matter 20(38):384201. DOI: 10.1088/0953-8984/20/38/384201. (link )

Ayubi-Moak, J. S., R. Akis, M. Saraniti, D. K. Ferry and S. M. Goodnick. 2008. Hot electron effects in ultra‐short gate length InAs/InAlAs HEMTs. Physica Status Solidi C 5(1):135-138. DOI: 10.1002/pssc.200776577. (link )

Raleva, K., D. Vasileska and S. M. Goodnick. 2008. Is SOD technology the solution to heating problems in SOI devices?. IEEE Electron Device Letters 29(6):621-624. DOI: 10.1109/LED.2008.920756. (link )

Raleva, K., D. Vasileska, S. M. Goodnick and M. Nadjaikov. 2008. Modeling thermal effects in nanodevices. IEEE Transactions on Electron Devices 55(6):1306-1316. DOI: 10.1109/TED.2008.921263. (link )

Ramayya, E. B., D. Vasileska, S. M. Goodnick and I. Knezevic. 2008. Electron transport in silicon nanowires: The role of acoustic phonon confinement and surface roughness scattering. Journal of Applied Physics 104:063711. DOI: 10.1063/1.2977758. (link )

2007

Ayubi-Moak, J. S., D. K. Ferry, S. M. Goodnick, R. Akis and M. Saraniti. 2007. Simulation of ultrasubmicrometer-gate In0.52Al0.48As/In0.75Ga0.25AsIn0.52Al0.48As/InP pseudomorphic HEMTs using a full-band Monte Carlo simulator. IEEE Transactions on Electron Devices 54(9):2327-2338. DOI: 10.1109/TED.2007.902902. (link )

Kothari, H., A. Ramamoorthy, R. Akis, S. M. Goodnick and D. K. Ferry. 2007. Linear and nonlinear conductance of ballistic quantum wires with hybrid confinement. Journal of Applied Physics 103(1):013701. DOI: 10.1063/1.2827466. (link )

Petrossian, L., S. J. Wilk, P. Joshi, S. Hihath, S. M. Goodnick and T. J. Thornton. 2007. Fabrication of cylindrical nanopores and nanopore arrays in silicon-on-insulator substrates. Journal of Microelectromechanical Systems 16(6):1419-1428. DOI: 10.1109/JMEMS.2007.908435. (link )

Petrossian, L., S. J. Wilk, P. Joshi, S. Hihath, J. D. Posner, S. M. Goodnick and T. Thornton. 2007. High aspect ratio cylindrical nanopores in silicon-on-insulator substrates. Solid-State Electronics 51(10):1391-1397. DOI: 10.1016/j.sse.2007.06.014. (link )

Ramayya, E. B., D. Vasileska, S. M. Goodnick and I. Knezevic. 2007. Electron mobility in silicon nanowires. IEEE Transactions on Nanotechnology 6(1):113-117. DOI: 10.1109/TNANO.2006.888521. (link )

Wilk, S. J., L. Petrossian, M. Goryll, T. Thornton, S. M. Goodnick, J. M. Tang and R. S. Eisenberg. 2007. Integrated electrodes on a silicon based ion channel measurement platform. Biosensors and Bioelectronics 23(2):183-190. DOI: 10.1016/j.bios.2007.03.030. (link )

2006

Beysserie, S., J. Branlard, S. Aboud, S. M. Goodnick and M. Saraniti. 2006. Comparative analysis of SOI and GOI MOSFETs. IEEE Transactions on Electron Devices 53(10):2545-2550. DOI: 10.1109/TED.2006.882272. (link )

Shailos, A., A. Ashok, J. P. Bird, R. Akis, D. K. Ferry, S. M. Goodnick, M. P. Lilly, J. L. Reno and J. A. Simmons. 2006. Linear conductance of quantum point contacts with deliberately broken symmetry. Journal of Physics: Condense Matter 18(5):1715. DOI: 10.1088/0953-8984/18/5/024. (link )

2005

Barker, J. M., D. K. Ferry, S. M. Goodnick, D. D. Koleske, A. Allerman and R. J. Shul. 2005. High‐field electron transport in AlGaN/GaN heterostructures. Physica Status Solidi C 2(7):2564-2568. DOI: 10.1002/pssc.200461384. (link )

Yamakawa, S., S. M. Goodnick, J. Branlard and M. Saraniti. 2005. Frequency analysis of GaN MESFETs using full‐band cellular Monte Carlo. Physical Status Solidi C 2(7):2573-2576. DOI: 10.1002/pssc.200461525. (link )

2004

Aboud, S., M. Saraniti, S. Goodnick, A. Brodschelm and A. Leitenstorfer. 2004. Full-band Monte Carlo simulations of photo excitation in silicon diode structures. Semiconductor Science and Technology 19(4):S301-S303. DOI: 10.1088/0268-1242/19/4/101. (link )

Barker, J. M., D. K. Ferry, S. M. Goodnick, D. D. Koleske, A. Allerman and R. J. Shul. 2004. Effects of surface treatment on the velocity–field characteristics of AlGaN/GaN heterostructures. Semiconductor Science and Technology 49(4):5478. DOI: 10.1088/0268-1242/19/4/157. (link )

Beysserie, S., S. Aboud, S. Goodnick, T. Thornton and M. Saraniti. 2004. Full‐band particle‐based simulation of SOI and GOI MOSFETs. Physica Status Solidi b 241(10):297-2302. DOI: 10.1002/pssb.200404940. (link )

Fitzer, N., A. Kuligk, R. Redmer, M. Stadele, S. M. Goodnick and W. Schattke. 2004. Full band Monte Carlo simulations of high-field electron transport in wide band-gap semiconductors. Semiconductor Science and Technology 19(4):S206-S208. DOI: 10.1088/0268-1242/19/4/070. (link )

Gerousis, C. P., S. M. Goodnick and W. Porod. 2004. Nanoelectronic single‐electron transistor circuits and architectures. International Journal of Circuit Theory and Applications 32(5):323-338. DOI: 10.1002/cta.284. (link )

Goodnick, S. M., M. Saraniti, D. Vasileska and S. Aboud. 2004. Particle-based methods in computational electronics. IEEE Potentials 23(5):12-16. DOI: 10.1109/MP.2004.1301239. (link )

Wilk, S. J., M. Goryll, G. M. Laws, S. M. Goodnick and T. J. Thornton. 2004. Teflon™-coated silicon apertures for supported lipid bilayer membranes. Applied Physics Letters 85(15):3307. DOI: 10.1063/1.1805712. (link )

Yamakawa, S., S. Aboud, M. Saraniti and S. M. Goodnick. 2004. Influence of electron-phonon interaction on electron transport in wurtzite GaN. Semiconductor Science and Technology 19(4):5475. DOI: 10.1088/0268-1242/19/4/156. (link )

2003

Chakraborty, P. S., M. R. McCartney, J. Li, C. Gopalan, M. Gilbert, S. M. Goodnick, T. J. Thornton and M. N. Kozicki. 2003. Electron holographic characterization of ultra-shallow junctions in Si for nanoscale MOSFETs. IEEE Transactions on Nanotechnology 2(2):102-109. DOI: 10.1109/TNANO.2003.812586. (link )

Evans, D. L., S. M. Goodnick and R. J. Roedel. 2003. ECE curriculum in 2013 and beyond: Vision for a metropolitan public research university. IEEE Transactions on Education 46(4):420-428. DOI: 10.1109/TE.2003.818750. (link )

Fitzer, N., A. Kuligk, R. Redmer, M. Stadele, S. M. Goodnick and W. Schattke. 2003. Full-band Monte Carlo simulations of high-field electron transport in GaAs and ZnS. Physicsl Review B 67(20):201201. DOI: 10.1103/PhysRevB.67.201201. (link )

Goodnick, S. M. and J. P. Bird. 2003. Quantum-effect and single-electron devices. IEEE Transactions on Nanotechnology 2(4):368-385. DOI: 10.1109/TNANO.2003.820773. (link )

Gopalan, C., P. S. Chakraborty, J. Yang, T. Kim, Z. Wu, M. R. McCartney, S. M. Goodnick, M. N. Kozicki and T. Thornton. 2003. Shallow source/drain extensions for deep submicron MOSFETs using spin-on-dopants. IEEE Transactions on Electron Devices 50(5):1277-1283. DOI: 10.1109/TED.2003.813467. (link )

Goryll, M., S. Wilk, G. M. Laws, T. Thornton, S. Goodnick, M. Saraniti and R. S. Eisenberg. 2003. Silicon-based ion channel sensor. Superlattices and Microstructures 34(3-6):451-457. DOI: 0.1016/j.spmi.2004.03.041. (link )

Hussein, Y. A., S. M. El-Ghazaly and S. M. Goodnick. 2003. An efficient electromagnetic-physics-based numerical technique for modeling and optimization of high-frequency multifinger transistors. IEEE Transactions on Microwave Theory and Techniques 51(12):2334-2346. DOI: 10.1109/TMTT.2003.820160. (link )

Indlekofer, K. M., J. P. Bird, R. Akis, D. K. Ferry and S. M. Goodnick. 2003. A model for interaction corrections to transport through open quantum dots. Physica E: Low-dimensional Systems and Nanostructures 19(1-2):206-209. DOI: 10.1016/S1386-9477(03)00309-6. (link )

Krishnaswamy, A. E., J. P. Bird and S. M. Goodnick. 2003. Non-invasive study of transport in open quantum dot structures. Physica E: Low-dimensional Systems and Nanostructures 19(1-2):202-205. DOI: 10.1016/S1386-9477(03)00308-4. (link )

Naser, B., K. H. Cho, S. W. Hwang, J. P. Bird, D. K. Ferry, S. M. Goodnick, B. G. Park and D. Ahn. 2003. Transport study of ultra-thin SOI MOSFETs. Physica E: Low-dimensional Systems and Nanostructures 19(1-2):39-43. DOI: 10.1016/S1386-9477(03)00326-6. (link )

Saraniti, M., J. Tang, S. M. Goodnick and S. J. Wigger. 2003. Numerical challenges in particle-based approaches for the simulation of semiconductor devices. Mathematics and Computers in Simulation 62(3-6):501-508. DOI: 10.1016/S0378-4754(02)00229-X. (link )

Singisetti, U., M. R. McCartney, P. S. Chakraborty, S. M. Goodnick, M. N. Kozicki and T. J. Thornton. 2003. Two-dimensional electrical characterization of ultrashallow source/drain extensions for nanoscale MOSFETs. Superlattices and Microstructures 34(3-4):301-310. DOI: 10.1016/j.spmi.2004.03.020. (link )

Wigger, S., M. Saraniti, S. M. Goodnick and A. Leitenstorfer. 2003. Fullband particle-based simulation of high-field transient transport in III-V semidonctors. Journal of Computational Eletronics 1:475-480. DOI: 10.1023/A:1022945122145. (link )

2002

Akis, R., M. Dur and S. M. Goodnick. 2002. The electron–phonon scattering rate of zinc blende GaN. Physica B: Condensed Matter 314(1-4):42-46. DOI: 10.1016/S0921-4526(01)01365-5. (link )

Barker, J. M., R. Akis, D. K. Ferry, S. M. Goodnick, T. J. Thornton, D. D. Koleske and R. L. Henry. 2002. High-field transport studies of GaN. Physica B: Condensed Matter 314(1-4):39-41. DOI: 10.1016/S0921-4526(01)01453-3. (link )

Barker, J. M., R. Akis, T. J. Thornton, D. K. Ferry and S. M. Goodnick. 2002. High field transport studies of GaN. Physica Status Solidi A 190(1):263-270. DOI: 10.1002/1521-396X(200203)190:1<263::AID-PSSA263>3.0.CO;2-U. (link )

Barker, J. M., D. K. Ferry, S. M. Goodnick, D. D. Koleske, A. E. Wickenden and R. L. Henry. 2002. Measurements of the velocity-field characteristic in AlGaN/GaN heterostructures. Microelectronics Engineering 63(1-3):193-197. DOI: 10.1016/S0167-9317(02)00627-5. (link )

Gerousis, C. P. and S. M. Goodnick. 2002. Simulations of single-electron tunneling circuits. Physica Status Solidi B 233(1):113-126. DOI: 10.1002/1521-3951(200209)233:1<113::AID-PSSB113>3.0.CO;2-A. (link )

Indlekofer, K. M., J. P. Bird, R. Akis, D. K. Ferry and S. M. Goodnick. 2002. A model for many-body interaction effects in open quantum dot systems. Journal of Physics: Condensed Matter 15(2):147-158. (link )

Indlekofer, K. M., J. P. Bird, R. Akis, D. K. Ferry and S. M. Goodnick. 2002. Interaction corrections to transport due to quasibound states in open quantum dots. Applied Physics Letters 81:3861. DOI: 10.1063/1.1521584. (link )

Krishnaswamy, A. E., S. M. Goodnick, M. N. Wybourne and C. Berven. 2002. Nonlinear transport in quantum point contact structures. Microelectronic Engineering 63(1-3):123-127. DOI: 10.1016/S0167-9317(02)00618-4. (link )

Reigrotzki, M., J. R. Madureira, A. Kuligk, N. Fitzer, R. Redmer, S. M. Goodnick, M. Dur and W. Schattke. 2002. Impact ionization and high-field effects in wide-band-gap semiconductors. Physica B: Condensed Matter 314(1-4):52-54. DOI: 10.1016/S0921-4526(01)01381-3. (link )

Saraniti, M., Y. Hu and S. M. Goodnick. 2002. Particle-based full-band approach for fast simulation of charge transport in Si, GaAs, and InP. VLSI Design 15:Art. 437608. DOI: 10.1080/1065514021000012354. (link )

Saraniti, M., Y. Hu, S. M. Goodnick and S. J. Wigger. 2002. Overshoot velocity in ultra-broadband THz studies in GaAs and InP. Physica B: Condensed Matter 314(1-4):162-165. DOI: 10.1016/S0921-4526(01)01377-1. (link )

Saraniti, M., J. Tang, S. M. Goodnick and S. Wigger. 2002. Parallel approaches for particle-based simulation of charge transport in semiconductors. Journal of Computational Electronics 1:215-218. DOI: 10.1023/A:1020777508605. (link )

Yang, J., T. J. Thornton, S. M. Goodnick, M. N. Kozicki and J. Lyding. 2002. Buried channel silicon-on-insulator MOSFETs for hot-electron spectroscopy. Physica B: Condensed Matter 314(1-4):354-357. DOI: 10.1016/S0921-4526(01)01404-1. (link )

2001

Ferry, D. K., M. Khoury, C. Gerousis, M. J. Rack, A. Gunther and S. M. Goodnick. 2001. Single-electron charging effects in Si MOS devices. Physica E: Low-dimensional Systems and Nanostructurs 9(1):69-75. DOI: 10.1016/S1386-9477(00)00179-X. (link )

Reigrotzki, M., J. R. Madureira, A. Kuligk, N. Fitzer, R. Redmer, S. M. Goodnick and M. Dur. 2001. Impact ionization and high field effects in wide band gap semiconductors. International Journal of High Speed Electronics and Systems 11(2):511-524. DOI: 0.1142/S0129156401000939. (link )

2000

Dur, M. and S. M. Goodnick. 2000. Electron energy relaxation in silicon quantum dots by acoustic and optical phonon scattering. Physica E: Low-dimensional Systems and Nanostructures 7(1-2):233-236. DOI: 10.1016/S1386-9477(99)00316-1. (link )

Gerousis, C., S. M. Goodnick and W. Porod. 2000. Toward nanoelectronic cellular neural networks. International Journal of Circuit Theory and Applications 28(6):523-535. DOI: 10.1002/1097-007X(200011/12)28:6<523::AID-CTA125>3.0.CO;2-R. (link )

Gunther, A., M. Khoury, S. Milicic, D. Vasileska, T. Thornton and S. M. Goodnick. 2000. Transport in split-gate silicon quantum dots. Superlattices and Microstructures 27(5-6):373-376. DOI: 10.1006/spmi.2000.0844. (link )

Khoury, M., A. Gunther, S. Milicic, M. J. Rack, S. M. Goodnick, D. Vasileska, T. J. Thornton and D. K. Ferry. 2000. Single-electron quantum dots in silicon MOS structures. Applied Physics A 71:415-421. DOI: 10.1007/s003390000554. (link )

Milicic, S., F. Badrieh, D. Vasileska, A. Gunther and S. M. Goodnick. 2000. 3D modeling of silicon quantum dots. Superlattices and Microstructures 27(5-6):377-382. DOI: 10.1006/spmi.2000.0845. (link )

Redmer, R., J. R. Madureira, N. Fitzer and S. M. Goodnick. 2000. Field effect on the impact ionization rate in semiconductors. Journal of Applied Physics 87:781. DOI: 10.1063/1.371941. (link )

Saraniti, M. and S. M. Goodnick. 2000. Hybrid fullband cellular automaton/Monte Carlo approach for fast simulation of charge transport in semiconductors. IEEE Transactions on Electron Devices 47(10):1909-1916. DOI: 10.1109/16.870571. (link )

Sarkar, A., S. Subramanian and S. M. Goodnick. 2000. Electron irradiation effects in AlGaAs/GaAs single heterojunction bipolar transistors. IEEE Transactions on Electron Devices 47(11):2024-2030. DOI: 0.1109/16.877162. (link )

Shatalov, A., S. Subramanian, S. Chadrasekhar and S. M. Goodnick. 2000. Neutron irradiation induced degradation of the collector–emitter offset voltage in InP/InGaAs single heterojunction bipolar transistors. Journal of Applied Physics 88:3765. DOI: 10.1063/1.1288778. (link )

1999

Bandyopadhyay, A., S. Subramanian, S. Chandrasekhar, A. G. Dentai and S. M. Goodnick. 1999. Degradation of DC characteristics of InGaAs/InP single heterojunction bipolar transistors under electron irradiation. IEEE Transactions on Electron Devices 46(5):840-849. DOI: 10.1109/16.760388. (link )

Bandyopadhyay, A., S. Subramanian, S. Chandrasekhar, A. G. Dentai and S. M. Goodnick. 1999. Degradation of InGaAs/InP double heterojunction bipolar transistors under electron irradiation. IEEE Transactions on Electron Devices 46(5):850-858. DOI: 10.1109/16.760389. (link )

Dur, M., S. M. Goodnick, P. Lugli and B. Deveaud. 1999. Effect of intercarrier scattering on intersubband transitions in GaAs/AlGaAs quantum well systems. Physica B: Condensed Matter 272(1-4):230-233. DOI: 10.1016/S0921-4526(99)00381-6. (link )

Dur, M., S. M. Goodnick, R. Redmer, M. Reigrotzki, N. Fitzer and M. Stadele. 1999. First principles modeling of high field transport in wide-band-gap materials. Physica B: Condensed Matter 272(1-4):295-298. DOI: 10.1016/S0921-4526(99)00291-4. (link )

Dur, M., A. D. Gunther, D. Vasileska and S. M. Goodnick. 1999. Acoustic phonon scattering in silicon quantum dots. Nanotechnology 10(2):142. (link )

Ferry, D. K., S. M. Goodnick and K. Hess. 1999. Energy exchange in single-particle electron–electron scattering. Physics B: Condensed Matter 272(1-4):538-141. DOI: 10.1016/S0921-4526(99)00335-X. (link )

Grondin, R., S. M. El-Ghazaly and S. M. Goodnick. 1999. A review of global modeling of charge transport in semiconductors and full-wave electromagnetics. IEEE Transactions on Microwave Theory and Techniques 47(6):817-829. DOI: 10.1109/22.769315. (link )

Hammadi, S., R. O. Grondin, S. M. El-Ghazaly and S. M. Goodnick. 1999. Full-wave electromagnetic simulation of millimeter-wave active devices and circuits. Annales Des Telecommunications 54:20-42. DOI: 10.1007/BF02998645. (link )

Krishnaswamy, A. E., S. M. Goodnick and J. P. Bird. 1999. Coulomb interaction between a 1D channel and a quantum dot. MIcroelectronic Engineering 47(1-4):81-83. DOI: 10.1016/S0167-9317(99)00154-9. (link )

Reigrotzki, M., R. Redmer, N. Fitzer, S. M. Goodnick, M. Dur and W. Schattke. 1999. Hole initiated impact ionization in wide bandgap semiconductors. Journal of Applied Physics 86:4458. DOI: 10.1063/1.371386. (link )

Tsen, K., D. K. Ferry, S. M. Goodnick, A. Salvador and H. Morkoc. 1999. Decay of the longitudinal optical phonons in wurtzite GaN and AlxGa1−xN. Physica B: Condensed Matter 272(1-4):406-408. DOI: 10.1016/S0921-4526(99)00312-9. (link )

1998

Dur, M., S. M. Goodnick, S. S. Pennathur, J. F. Wager, M. Reigrotzki and R. Redmer. 1998. High-field transport and electroluminescence in ZnS phosphor layers. Journal of Applied Physics 83:3176. DOI: 10.1063/1.367085. (link )

Dur, M., S. M. Goodnick, M. Reigrotzki and R. Redmer. 1998. Monte Carlo simulations of high field transport in electroluminescent devices. Computational Electronics 8:Art. 053546. DOI: 10.1155/1998/53546. (link )

Pennathur, S. S., C. K. Sandalci, C. K. Koc and S. M. Goodnick. 1998. 3D parallel Monte Carlo simulation of GaAs MESFETs. VLSI Design 6:Art. 064531. DOI: 10.1155/1998/64531. (link )

Poweleit, C. D., A. Gunther, S. M. Goodnick and J. Menendez. 1998. Raman imaging of patterned silicon using a solid immersion lens. Applied Physics Letters 73(16):. DOI: 10.1063/1.121700. (link )

Remley, K. A., A. Weisshaar, V. K. Tripathi and S. M. Goodnick. 1998. Modeling radiation fields in a sub-picosecond photo-conducting system. Computational Electronics 8:Art. 010832. DOI: 10.1155/1998/10832. (link )

Saraniti, M., G. Zandler, G. Formicone, S. Wigger and S. Goodnick. 1998. Cellular automata simulation of nanometer scale MOSFETs. Seminconductor Science and Technology 13:A177. DOI: 10.1088/0268-1242/13/8A/050. (link )

Vasileska, D., M. N. Wybourne, S. M. Goodnick and A. Gunther. 1998. 3D simulation of GaAs/AlGaAs quantum dot point contact structures. Semiconductor Science and Technology 13:A37-40. DOI: 10.1088/0268-1242/13/8A/013. (link )

1997

Dur, M., S. M. Goodnick and P. Lugli. 1997. Monte Carlo studies of intersubband relaxation in wide GaAs/AlGaAs quantum wells. Physica Status Solidi B 204(1):170-173. DOI: 10.1002/1521-3951(199711)204:1<170::AID-PSSB170>3.0.CO;2-A. (link )

Lee, I., S. S. Pennathur, S. M. Goodnick and J. F. Wager. 1997. Band structure and high-field electron transport of a ZnS phosphor in AC thin-film electroluminescent devices. Journal of Korean Physics Society 31(3):517-521.

Menoni, C. S., O. Buccafusca, M. C. Marconi, D. Patel, G. Y. Robinson and S. M. Goodnick. 1997. Effect of indirect Γ-L and Γ-X transfer on the carrier dynamics of InGaP/InAlP multiple quantum wells. Applied Physics Letters 70:102. DOI: 10.1063/1.119275. (link )

Reigrotzki, M., M. Dur, W. Schattke, N. Fitzer, R. Redmer and S. M. Goodnick. 1997. High-field transport and impact ionization in wide bandgap semiconductors. Phusical Status Solidi B 204(1):528-530. DOI: 10.1002/1521-3951(199711)204:1<528::AID-PSSB528>3.0.CO;2-J. (link )

Sandalci, C. K., C. K. Koc and S. M. Goodnick. 1997. Three-dimensional Monte Carlo device simulation with parallel multigrid solver. INternational Journal of High Speed Computing 9(3):223-236. DOI: 10.1142/S0129053397000143. (link )

Smith, J. C., M. N. Wybourne, C. Berven, R. Ramasubramaniam and S. M. Goodnick. 1997. Temporal instabilities in the far-from-equilibrium transport of quantum point contacts. Europhysics Letters 39(1):73. DOI: 10.1209/epl/i1997-00316-7 Journal RSS. (link )

Subramanian, S., A. Sarkar, L. Ungier and S. M. Goodnick. 1997. Integrity of III-V heterojunction interfaces under gamma irradiation. IEEE Transactions on Nuclear Science 44(6):1862-1869. DOI: 10.1109/23.658954. (link )

1996

Dur, M., S. M. Goodnick and P. Lugli. 1996. Monte Carlo simulation of intersubband relaxation in wide, uniformly doped GaAs / AlxGa1 − x As quantum wells. Physical Review B 54(24-25):17794. DOI: 10.1103/PhysRevB.54.17794. (link )

Murdin, B. N., C. G. Langerak, M. Helm, P. Kruck, W. Heiss, V. Rosskopf, G. Strasser, E. Gornik, M. Dur, S. M. Goodnick, S. Lee, I. Galbraith and C. R. Pidgeon. 1996. Time resolved studies of intersubband relaxation in GaAs/AlGaAs quantum wells below the optical phonon energy using a free electron laser. Siperlattices and Microstructures 19(1):17-24. DOI: 10.1006/spmi.1996.0003. (link )

Reigrotzki, M., R. Redmer, I. Lee, S. S. Pennathur, M. Dur, J. F. Wager, S. M. Goodnick, P. Vogl, H. Eckstein and W. Schattke. 1996. Impact ionization rate and high‐field transport in ZnS with nonlocal band structure. Journal of Applied Physics 80:5054. DOI: 10.1063/1.363550. (link )

Smith, J. C., C. Berven, S. M. Goodnick and M. N. Wybourne. 1996. Nonequilibrium random telegraph switching in quantum point contacts. Physica B: Condensed Matter 227(1-4):197-201. DOI: 10.1016/0921-4526(96)00398-5. (link )

Smith, J. C., C. Berven, M. N. Wybourne and S. M. Goodnick. 1996. Conductance instabilities in quantum point contacts. Surface Science 361-362(Jul):656-659. DOI: 10.1016/0039-6028(96)00493-1. (link )

Wybourne, M. N., J. C. Smith, C. Berven, R. Ramasubramaniam and S. M. Goodnick. 1996. Instabilities in quantum point contact structures. Superlattices and Microstructures 20(4):419-425. DOI: 10.1006/spmi.1996.0098. (link )

1995

Ang, W. M., S. Pennathur, L. Pham, J. F. Wager and S. M. Goodnick. 1995. Evidence for band‐to‐band impact ionization in evaporated ZnS:Mn alternating‐current thin‐film electroluminescent devices. Journal of Applied Physics 77(6):2719. DOI: 10.1063/1.358741. (link )

Goodnick, S. M., S. S. Pennathur, U. A. Ranawake, P. M. Lenders and V. K. Tripathi. 1995. Parallel implementation of a Monte Carlo particle simulation coupled to Maxwell's equations. International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 8(3-4):205-219. DOI: 10.1002/jnm.1660080306. (link )

Lee, I., S. M. Goodnick, M. Gulia, E. Molinari and P. Lugli. 1995. Microscopic calculation of the electron–optical-phonon interaction in ultrathin GaAs/ AlxGa1 − x As alloy quantum-well systems. Physical Review B 51(11-15):7046. DOI: 10.1103/PhysRevB.51.7046. (link )

Patel, D., C. S. Menoni, D. W. Schult, T. McMahon and S. M. Goodnick. 1995. Effect of pressure on the output characteristics of p-GaAs/AlGaAs heterojunction field effect transistor. Journal of Physics and Chemistry of Solids 56(3-4):669-672. DOI: 10.1016/0022-3697(94)00261-4. (link )

Saraniti, M., G. Zandler, G. Formicone and S. M. Goodnick. 1995. Cellular automata studies of vertical silicon devices. Computational Electronics 8:Art. 089897. DOI: 10.1155/1998/89897. (link )

1994

Berven, C., M. N. Wybourne, A. Ecker and S. M. Goodnick. 1994. Negative differential conductance in quantum waveguides. Physical Review B 50:14638. DOI: 10.1103/PhysRevB.50.14639. (link )

Hopfel, R. A., R. Rodrigues, Y. Limura, T. Yasui, Y. Segawa, Y. Aoyagi and S. M. Goodnick. 1994. Intersubband relaxation of hot excitons in GaAs quantum wells. Semiconductor Science and Technology 9(55):733. DOI: 10.1088/0268-1242/9/5S/090. (link )

Ranawake, U. A., C. Huster, P. M. Lenders and S. M. Goodnick. 1994. PMC-3D: A parallel three-dimensional Monte Carlo semiconductor device simulator. IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 13(6):712-724. DOI: 10.1109/43.285244. (link )

Wu, J. C., M. N. Wybourne, C. Berven, S. M. Goodnick and D. D. Smith. 1994. Negative differential conductance in a lateral hot-electron device. Semiconductor Science and Technology 8(55):922. DOI: 10.1088/0268-1242/9/5S/140. (link )

1993

Bhattacharyya, K., S. M. Goodnick and J. F. Wager. 1993. Monte Carlo simulation of electron transport in alternating‐current thin‐film electroluminescent devices. Journal of Applied Physics 73:3390-3395. DOI: 10.1063/1.352938. (link )

Bhattacharyya, K., J. O. Orwa and S. M. Goodnick. 1993. Two‐dimensional electron transport in selectively doped n‐AlGaAs/InGaAs/GaAs pseudomorphic structures. Journal of Applied Physics 73:4396. DOI: 10.1063/1.352777. (link )

Goodnick, S. M., J. C. Wu, M. N. Wybourne and D. D. Smith. 1993. Hot-electron bistability in quantum-dot structures. Physical Review B 48:9150. DOI: 10.1103/PhysRevB.48.9150. (link )

Harbury, H. K., W. Porod and S. M. Goodnick. 1993. A novel quantum wire formed by lateral p–n–p junctions between quasi‐two‐dimensional electron and hole systems at corrugated GaAs/AlGaAs interfaces. Journal of Applied Physics 73:1509-1520. DOI: 10.1063/1.353225. (link )

Hopfel, R. A., R. Rodrigues, Y. Iimura, T. Yasui, Y. Segawa, Y. Aoyagi and S. M. Goodnick. 1993. Intersubband relaxation of heavy-hole excitons in GaAs quantum wells. Physical Review B 47:10943-10946. DOI: 10.1103/PhysRevB.47.10943. (link )

Rota, L., F. Rossi, S. M. Goodnick, P. Lugli, E. Molinari and W. Porod. 1993. Reduced carrier cooling and thermalization in semiconductor quantum wires. Physical Review B 47:1632-1635. DOI: 10.1103/PhysRevB.47.1632. (link )

Tomita, A., J. Shah, J. E. Cunningham, S. M. Goodnick, P. Lugli and S. L. Chuang. 1993. Femtosecond hole relaxation in n-type modulation-doped quantum wells. Physical Review B 48(8-15):5708-5711. DOI: 10.1103/PhysRevB.48.5708. (link )

Wu, J. C., M. N. Wybourne, A. Weisshaar and S. M. Goodnick. 1993. Waveguide effects in quantum wires with double‐bend discontinuities. Journal of Applied Physics 74:4590. DOI: 0.1063/1.354377. (link )

1992

Goodnick, S. M. and J. E. Lary. 1992. Monte Carlo studies of intersubband relaxation in semiconductor microstructures. Semiconductor Science and Technology 7(38):B109-B115. DOI: .1088/0268-1242/7/3B/026. (link )

Harbury, H. K., W. Porod and S. M. Goodnick. 1992. Lateral p–n junctions between quasi‐two‐dimensional electron and hole systems at corrugated GaAs/AlGaAs interfaces. Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena 10:2051-2055. DOI: 10.1116/1.586316. (link )

Porod, W., H. K. Harbury and S. M. Goodnick. 1992. Lateral p‐n junctions and quantum wires formed by quasi two‐dimensional electron and hole systems at corrugated GaAs/AlGaAs interfaces. Applied Physics Letters 61:1823-1825. DOI: 10.1063/1.108386. (link )

Rucker, H., P. Lugli, S. M. Goodnick and J. E. Lary. 1992. Intersubband relaxation of photoexcited carriers in asymmetric coupled quantum wells. Semiconductor Science and Technology 7(38):B98-B101. DOI: 10.1088/0268-1242/7/3B/024. (link )

Weisshaar, A., S. M. Goodnick and V. K. Tripathi. 1992. Modal analysis applied to quantum waveguide structures and discontinuities. Superlattices and Microstructures 12(1):37-41. DOI: 10.1016/0749-6036(92)90216-R. (link )

Wu, J. C., M. N. Wybourne, C. Berven, S. M. Goodnick and D. D. Smith. 1992. Negative differential conductance observed in a lateral double constriction device. Applied Physics Letters 61(20):2425. DOI: 10.1063/1.108186. (link )

1991

Goodnick, S. M., J. E. Lary and P. Lugli. 1991. Intersubband relaxation of hot carriers in quantum well systems. Superlattices and Microstructures 10(4):461-466. DOI: 10.1016/0749-6036(91)90310-N. (link )

Ranawake, U. A., P. M. Lenders and S. M. Goodnick. 1991. On lower bounds for the communication volume indistributed systems. Parallel Processing Letters 1(2):125-133. DOI: 10.1142/S0129626491000070. (link )

Weisshaar, A., J. E. Lary, S. M. Goodnick and V. K. Tripathi. 1991. Analysis and modeling of quantum waveguide structures and devices. Journal of Applied Physics 70(1):355-366. DOI: 10.1063/1.350281. (link )

Weisshaar, A., J. Lary, S. M. Goodnick and V. K. Tripathi. 1991. Negative differential resistance in a resonant quantum wire structure. IEEE Electron Device Letters 12(1):2-4. DOI: 10.1109/55.75678. (link )

Wu, J. C., M. N. Wybourne, W. Yindeepol, A. Weisshaar and S. M. Goodnick. 1991. Interference phenomena due to a double bend in a quantum wire. Applied Physics Letters 59(1):102-104. DOI: 10.1063/1.105558. (link )

Yoo, H., S. M. Goodnick and J. R. Arthur. 1991. Transport in AlxGa1−xAs/InyGa1−yAs resonant tunnelling diodes with asymmetric layers. Journal of Crystal Growth 111(1-4):1095-1099. DOI: 10.1016/0022-0248(91)91140-6. (link )

1990

Yoo, H., S. M. Goodnick and J. R. Arthur. 1990. Influence of spacer layer thickness on the current‐voltage characteristics of AlGaAs/GaAs and AlGaAs/InGaAs resonant tunneling diodes. Applied Physics Letters 56(1):B4-B6. DOI: 10.1063/1.102660. (link )

1989

Goodnick, S. M., J. E. Lary, R. Owen, O. Sri and C. W. Wilmsen. 1989. The influence of interfacial roughness on parallel transport at oxide–semiconductor and heterojunction interfaces. Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 7(4):1035-1040. DOI: 10.1116/1.584797. (link )

Goodnick, S. M. and P. Lugli. 1989. Monte Carlo simulation of intersubband relaxation in semiconductor quantum wells. Superlattices and Microstructures 5(4):561-563. DOI: 10.1016/0749-6036(89)90385-6. (link )

Goodnick, S. M., P. Lugli, W. H. Knox and D. S. Chemla. 1989. Monte Carlo simulation of femtosecond spectroscopy in semiconductor heterostructures. Solid-State Electronics 32(12):1737-1741. DOI: 10.1016/0038-1101(89)90304-3. (link )

Lugli, P., P. Bordone, S. Gualdi, P. Poli and S. M. Goodnick. 1989. Hot phonons in quantum wells systems. Solid-State Electronics 32(12):1881-1885. DOI: 10.1016/0038-1101(89)90329-8. (link )

Lugli, P., P. Bordone, L. Reggiani, M. Rieger, P. Kocevar and S. M. Goodnick. 1989. Monte Carlo studies of nonequilibrium phonon effects in polar semiconductors and quantum wells. I. Laser photoexcitation. Physical Review B 39(11-15):7852-7865. DOI: 10.1103/PhysRevB.39.7852. (link )

Rieger, M., P. Kocevar, P. Lugli, P. Bordone, L. Reggiani and S. M. Goodnick. 1989. Monte Carlo studies of nonequilibrium phonon effects in polar semiconductors and quantum wells. II. Non-Ohmic transport in n-type gallium arsenide. Physical Review B 39(11-15):7866-7875. DOI: 10.1103/PhysRevB.39.7866. (link )

Weisshaar, A., J. Lary, S. M. Goodnick and V. K. Tripathi. 1989. Analysis of discontinuities in quantum waveguide structures. Applied Physics Letters 55(20):2114-2116. DOI: 10.1063/1.102079. (link )

Wigger, S. J., S. M. Goodnick and M. Saraniti. 1989. Full-band CA/Monte Carlo modeling of ultrasmall FETs. Superlattices and Microstructures 27(5-6):417-420. DOI: 10.1006/spmi.2000.0860. (link )

Yoo, H., S. M. Goodnick and J. R. Arthur. 1989. Phonon assisted tunneling in lattice‐matched and pseudomorphic resonant tunneling diodes. Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 8(2):370-373. DOI: 10.1116/1.585074. (link )

1988

Goodnick, S. M. and P. Lugli. 1988. Effect of electron-electron scattering on nonequilibrium transport in quantum-well systems. Physical Review B 37(5-15):2578-2588. DOI: 10.1103/PhysRevB.37.2578. (link )

Goodnick, S. M. and P. Lugli. 1988. Electron-electron scattering during photoexcitation in quantum wells. Solid-State Electronics 31(3-4):463-466. DOI: 10.1016/0038-1101(88)90319-X. (link )

Goodnick, S. M. and P. Lugli. 1988. Influence of electron-hole scattering on subpicosecond carrier relaxation in AlxGa1 − xAs / GaAs quantum wells. Physical Review B 38(14-15):101325-101328. DOI: 10.1103/PhysRevB.38.10135. (link )

1987

Bailey, G. R., R. E. Owens, C. W. Wilmsen and S. M. Goodnick. 1987. Two dimensional electron transport in InP surface layers. JOurnal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 5(4):976. DOI: 10.1116/1.583828. (link )

Goodnick, S. M. and P. Lugli. 1987. Subpicosecond dynamics of electron injection into GaAs/AlGaAs quantum wells. Applied Physics Letters 51(8):584-586. DOI: 10.1063/1.98355. (link )

Lugli, P. and S. M. Goodnick. 1987. Nonequilibrium longitudinal-optical phonon effects in GaAs-AlGaAs quantum wells. Physical Review Letters 59(6-10):716-719. DOI: 10.1103/PhysRevLett.59.716. (link )

1986

Lugli, P., S. M. Goodnick and F. Koch. 1986. Monte Carlo study of hot electrons in quantum wells. Superlattices and Microstructures 2(4):335-338. DOI: 10.1016/0749-6036(86)90043-1. (link )

1985

Goodnick, S. M., D. K. Ferry, C. W. Wilmsen, Z. Liliental, D. Fathy and O. L. Krivanek. 1985. Surface roughness at the Si(100) SiO2 interface. Physical Review B 32(12-15):8171-8186. DOI: 10.1103/PhysRevB.32.8171. (link )

Krivanek, O. L., Z. Liliental, J. F. Wager, R. Gan, S. M. Goodnick and C. W. Wilmsen. 1985. A combined high‐resolution electron microscopy, x‐ray photoemission spectroscopy, and electrical properties study of the InP–SiO2 interface. Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 3(4):1081-1086. DOI: 10.1116/1.583056. (link )

Liliental, Z., O. L. Krivanek, J. F. Wager and S. M. Goodnick. 1985. Structure of the InP/SiO2 interface. Applied Physics Letters 46(9):889-891. DOI: 10.1063/1.95877. (link )

1984

Geib, K. M., S. M. Goodnick, D. Lin, R. G. Gann, C. W. Wilmsen and J. F. Wager. 1984. Influence of interfacial structure on the electronic properties of SiO2/InP MISFET’s. Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 2(3):516. DOI: 10.1116/1.582810. (link )

Goodnick, S. M., T. Hwang and C. W. Wilmsen. 1984. New model for slow current drift in InP metal‐insulator‐semiconductor field‐effect transistors. Applied Physics Letters 44(4):453-455. DOI: 10.1063/1.94764. (link )

1983

Goodnick, S. M. and D. K. Ferry. 1983. Electron transport in inversion and accumulation layers of III V compounds. Thin Solid Films 103(1-3):27-46. DOI: 10.1016/0040-6090(83)90422-4. (link )

Goodnick, S. M., R. G. Gann, D. K. Ferry, C. W. Wilmsen and O. L. Krivanek. 1983. Surface roughness induced scattering and band tailing. Surface Science 113(1-3):233-238. DOI: 10.1016/0039-6028(82)90591-X. (link )

Goodnick, S. M., R. G. Gann, J. R. Sites, D. K. Ferry and C. W. Wilmsen. 1983. Surface roughness scattering at the Si–SiO2 interface. Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 1(3):803-808. DOI: 10.1116/1.582696. (link )

Goodnick, S. M., W. Porod, R. Grondin, S. M. Goodnick, C. W. Wilmsen and D. K. Ferry. 1983. A Monte Carlo study of Si(111) surface oxidation. Journal of Vacuum Science & Technology B: Microelectronics Processing and Phenomena 1(3):767-772. DOI: 10.1116/1.582689. (link )

Goodnick, S. M., J. R. Sites, K. S. Yi, D. K. Ferry and C. W. Wilmsen. 1983. Valley splitting on tilted Si(100) surfaces. Physics Letters A 97(3):111-113. DOI: 10.1016/0375-9601(83)90526-1. (link )

1981

Wager, J. F., D. L. Ellsworth, S. M. Goodnick and C. W. Wilmsen. 1981. Composition and thermal stability of thin native oxides on InP. Journal of Vacuum Science and Technology 19(3):513. DOI: 10.1116/1.571049. (link )

1980

Goodnick, S. M., M. Fathipour, D. L. Ellsworth and C. W. Wilmsen. 1980. Effects of a thin SiO2 layer on the formation of metal–silicon contacts. Journal of Vacuum Science and Technology 18(3):949-954. DOI: 10.1116/1.570962. (link )

Goodnick, S. M., J. F. Wager and C. W. Wilmsen. 1980. Thermal degradation of indium-tin-oxide/p-silicon solar cells. Journal of Applied Physics 51(1):527-531. DOI: 10.1063/1.327356. (link )

Inoue, N., S. M. Goodnick and C. W. Wilmsen. 1980. Electron-beam-induced current and scanning light spot techniques for investigating the response of polycrystalline solar cells. Solar Cells 1(2):233-236. DOI: 10.1016/0379-6787(80)90057-5. (link )

1978

Cheek, G., N. Inoue, S. M. Goodnick, A. Genis, C. W. Wilmsen and J. B. DuBow. 1978. Fabrication and characterization of indium tin oxide (ITO)/polycrystalline silicon solar cells. Applied Physics Letters 33(7):643. DOI: 10.1063/1.90448. (link )

Books

2015

Korkin, A., S. M. Goodnick and R. Nemanich eds. 2015. Nanoscale Materials and Devices for Electronics, Photonics and Solar Energy. Springer International Publishing. ISBN: 978-3319186320.

2010

Vasileska, D., S. M. Goodnick and G. Klimeck. 2010. Computational Electronics: Semiclassical and Quantum Device Modeling and Simulation. CRC Press. ISBN: 978-1420064834.

2009

Ferry, D. K., S. M. Goodnick and J. Bird. 2009. Transport in Nanostructures 2nd Edition. Cambridge University Press. Cambridge, UK. ISBN: 978-0521877480.

2006

Vasileska, D. and S. M. Goodnick. 2006. Computational Electronics: Synthesis Lectures on Computational Electromagnetics. Morgan & Claypool Publishes.

1997

Ferry, D. K. and S. M. Goodnick. 1997. Transport in Nanostructures. Cambridge Press. Cambridge, UK.

Book Chapters

2018

Raleva, K., A. R. Shaik, R. Hathwar, A. Laturia, S. S. Qazi, R. Daugherty, D. Vasileska and S. M. Goodnick. 2018. Monte Carlo device simulations. Pp. 773-806 In: Piprek, J. ed., Handbook of Optoelectronic Device Modeling & Simulation: Lasers, Modulators, Photodetectors, Solar Cells, and Numerical Methods. Vol II. CRC Press. Boca Raton, FL. ISBN: 978-1498749565.

2013

Goodnick, S. M., N. Faleev and C. Honsberg. 2013. Chapter 3 Nanoscale photovoltaics and the terawatt challenge. Pp. 77-116 In: Korkin, A. and D. J. Lockwood eds., Nanoscale Applications for Information and Energy Systems. Springer-Verlag. New York, NY. ISBN: 978-1-4614-5016-0.

2012

Akis, R., D. K. Ferry, M. J. Gilbert and S. M. Goodnick. 2012. Quantum transport in nanoscale. Pp. 45-66 In: Goddard, III, W. A., D. W. Brenner, S. E. Lyshevski and G. J. Iafrate eds., Handbook of Nanoscience, Engineering, and Techonology, Third Edition. CRC Press. ISBN: 978-1439860151.

2011

Vasileska, D., K. Raleva and S. M. Goodnick. 2011. 15. Monte Carolo device simulations. Pp. 2968-3100 In: Mordechai, S. ed., Applications of Monte Carlo Method in Science and Engineering. InTechOpen. ISBN: 978-953-307-691-1.

2010

Ranawake, U. A., P. M. Lenders and S. M. Goodnick. 2010. Parallelization of Monte Carlo algorithms in semiconductor device physics on hypercube multiprocessors. Pp. 137-140 In: Hess, K., J. P. Leburton and U. Ravaioll eds., Computational Electronics: Semiconductor Transport and Device Simulation. Kluwer Academic Publishers. Norwell, MA.

2008

Goodnick, S. M. 2008. Transport in nanostructures. Pp. 115-170 In: Korkin, A. and F. Rosei eds., Nanoelectronics and Photonics: From Atoms to Materials, Devices, and Architectures. Springer Science+Business Media. New York, NY. ISBN: 978-1441926234.

Goodnick, S. M. and M. Saraniti. 2008. Cellular Monte Carlo simulation of high field transport in semiconductor devices. Pp. 21-29 In: Ryzhii, M. and V. Ryzhii eds., Physics and Modeling of Tera- and Nano-Devices. Vol 47. DOI: 10.1142/9789812779052_0003. ISBN: 978-9812779045. (link )

2006

Vasileska, D., D. K. Ferry and S. M. Goodnick. 2006. Compuational nanoelectronics. Pp. Chapter 125 In: Rieth, M. and W. Schommers eds., Handbook of Theoretical and Computational Nanotechnology. American Scientific Publishers. ISBN: 978-1588830425.

2001

Ferry, D. K. and S. M. Goodnick. 2001. Ensemble Monte Carlo simulations of ultrafast phenomena in semiconductors. Pp. 307-352 Ultrafast Phenomena in Semiconductors. Sprionger. New York, NY. ISBN: 978-1-4612-6562-7.

Goodnick, S. M. and D. Vasileska. 2001. Computational electronics. Pp. 1456-1470 In: Buschow, K. J., R. W. Cahn, M. C. Flemings, B. Ilschner, E. J. Kramer, S. Mahajan and P. Veyssiere eds., Encyclopedia of Materials: Science and Technology. Elsevier. ISBN: 9780080431529.

Reigrotzki, M., J. R. Madureira, A. Kuligk, N. Fitzer, R. Redmer, S. M. Goodnick and M. Dur. 2001. Impact ionization and high field effects in wide band gap semiconductors. Pp. 149-162 In: Brennan, K. F. and P. P. Ruden eds., Topics in High Field Transport in Semiconductors. World Scientific Pubishing Co.. Singapore. ISBN: 978-9810246716.

1995

Ecker, A., S. M. Goodnick, C. Berven and M. N. Wybourne. 1995. Nonequilibrium phenomena in split gate quantum waveguides. Pp. 505-508 In: Ferry, D. K., H. L. Grubin, C. Jacoboni and A. P. Jauho eds., Quantum Transport in Ultrasmall Devices. Springer US. ISBN: 978-0-306-44999-4.

1992

Goodnick, S. M. and P. Lugli. 1992. III.1 - Hot-carrier relaxation in quasi-2D systems. Pp. 191-234 In: Shah, J. ed., Hot Carriers in Semiconductor Nanostructures: Physics and Applications. Elsevier. ISBN: 978-0-12-638140-5.

1991

Weisshaar, A., J. E. Lary, S. M. Goodnick and V. K. Tripathi. 1991. Negative differential resistance in a double-constriction quantum wire structure. Pp. 543-546 In: Ferry, D. K., J. R. Barker and C. Jacoboni eds., Granular Nanelectronics. Vol 251. Springer US. New York, NY. ISBN: 978-0-306-43881-3.

1989

Goodnick, S. M. 1989. Monte-Carlo simulation of femtosecond carrier relaxation in semiconductor quantum wells. Pp. 561-584 In: Fasol, G., A. Fasolino and P. Lugli eds., Spectroscopy of Semiconductor Microstructures. Springer Science+Business Media. New York, NY. ISBN: 978-1475765670.

1988

Goodnick, S. M. 1988. Structure of the Si/Oxide interface. Pp. 647-649 Properties of Silicon, EMIS Datareviews Series 4. Institute of Electrical Engineers. ISBN: 9780852964750.

1986

Goodnick, S. M. and P. Lugli. 1986. Monte Carlo study of hot electron transport in GaAs-AlGaAs quantum wells. Pp. 116-119 In: Kallback, B. and H. Beneking eds., High-Speed Electronics: Basic Physical Phenomena and Device Principles. Springer. Berlin, Heidelberg. ISBN: 978-3-642-82981-9.

1985

Goodnick, S. M. and D. K. Ferry. 1985. III-V Inversion-layer transport. Pp. 283-326 In: Wilmsen, C. W. ed., Physics and Chemistry of III-V Compound Semiconductor Interfaces. Springer. Boston, MA. ISBN: 978-1-4684-4837-5.

Conference Papers

2010

Raleva, K., D. Vasileska and S. M. Goodnick. 2010. Self-heating effects in high performance devices. Pp. 114-122 In: Gusev, M. and P. Mitrevski eds., ICT Innovations 2010. International Conference on ICT Innovations. Berlin, Heidelberg.

2008

Akis, R., J. S. Ayubi-Moak, N. Faralli, S. M. Goodnick, D. K. Ferry and M. Saraniti. 2008. Simulating pseudomorphic HEMTs: Optimizing performance to achieve multi-terahertz operating frequencies. 2008 Device Research Conference. Device Research Conference, 2008. Santa Barbara, CA.

2004

Barker, J. M., D. K. Ferry, S. M. Goodnick, D. D. Koleske, A. Allerman and R. J. Shul. 2004. Studies of high field transport in GaN/AlGaN heterostructures. Proceedings 7th International Conference on Solid-State and Integrated Circuits Technology,. 7th International Conference on Solid-State and Integrated Circuits Technology,. Beijing, China.

1999

Goodnick, S. M., J. P. Bird, D. K. Ferry, A. Gunther, M. Khoury, M. N. Kozicki, M. J. Rack, T. Thornton and D. Vasileska. 1999. Transport in split gate MOS quantum dot structures. Proceedings Ninth Great Lakes Symposium on VLSI. Ninth Great Lakes Symposium on VLSI. Ypsilanti, NI. (link )

1998

Remley, K. A., A. Weisshaar, S. M. Goodnick and V. K. Tripathi. 1998. Near and far field characterization of radiation from ultra-fast electronic systems. 1998 IEEE MTT-S International Microwave Symposium Digest . 1998 IEEE MTT-S International Microwave Symposium. Baltimore, MD.

1992

Weisshaar, A., S. M. Goodnick and V. K. Tripathi. 1992. A rigorous method of moments solution for curved waveguide bends and its applications. 1992 IEEE MTT-S Microwave Symposium Digest. 1992 IEEE MTT-S Microwave Symposium. Albuquerque, NM.

1990

Goodnick, S. M., J. E. Lary and P. Lugli. 1990. Intersubband relaxation of hot carriers in coupled quantum wells. Proceedings of SPIE: Quantum Well and Superlattice Physics III. Advances in Semiconductors and Superconductors: Physics Toward Devices Applications. San Diego, CA. (link )