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Trevor Thornton

Trevor Thornton

Senior Global Futures Scientist, Julie Ann Wrigley Global Futures Laboratory


School of Electrical, Computer, and Energy Engineering
Arizona State University
PO Box 875706
Tempe, AZ 85287-5706


  • Senior Global Futures Scientist, Julie Ann Wrigley Global Futures Laboratory


Professor Thornton is currently a professor of electrical engineering in the Ira A. Fulton Schools of Engineering at Arizona State University. He has published more than 150 journal and conference papers and has seven issued patents. He is the founder of RF Micropower, an SBIR-funded company that is commercializing highly efficient RF and power management integrated circuits based on SOI MESFETs, a patented CMOS-compatible transistor technology. His research interests include silicon-on-insulator MESFETs, electronics for extreme environments, electron transport in nanostructures, and bio-molecular sensors.

Prior to ASU, Trevor Thornton has held post-doctoral appointments at the Cavendish Laboratory, Cambridge (1986-88) and Bell Communications Research in New Jersey (1988-1990). In 1990, he took up a lectureship in the Electrical Engineering Dept. of Imperial College in London and was promoted to Reader in 1996. In 1998, he joined the faculty of the ASU Electrical Engineering Dept. From 1991-1998 he worked as a consultant for the Hitachi Cambridge Laboratory and was a visiting professor at the NTT Basic Research Laboratories in Tokyo in 1990. In 2002, he was a summer faculty fellow at the Air Force Research Laboratories, Kirtland AFB, Albuquerque, NM. He is currently the director of the Nanotechnology Collaborative Infrastructure Southwest. The NCI-SW is the southwest regional node of the National Nanotechnology Coordinated Infrastructure supported by the National Science Foundation.


  • PhD, Physics, Cambridge University, 1987
  • MS, Physics, Cambridge University, 1985
  • BA, Physics, Cambridge University, 1983


Journal Articles


Petrossian, L., S. J. Wilk, P. Joshi, S. Hihath, S. M. Goodnick and T. J. Thornton. 2007. Fabrication of cylindrical nanopores and nanopore arrays in silicon-on-insulator substrates. Journal of Microelectromechanical Systems 16(6):1419-1428. DOI: 10.1109/JMEMS.2007.908435. (link )

Petrossian, L., S. J. Wilk, P. Joshi, S. Hihath, J. D. Posner, S. M. Goodnick and T. Thornton. 2007. High aspect ratio cylindrical nanopores in silicon-on-insulator substrates. Solid-State Electronics 51(10):1391-1397. DOI: 10.1016/j.sse.2007.06.014. (link )

Wilk, S. J., L. Petrossian, M. Goryll, T. Thornton, S. M. Goodnick, J. M. Tang and R. S. Eisenberg. 2007. Integrated electrodes on a silicon based ion channel measurement platform. Biosensors and Bioelectronics 23(2):183-190. DOI: 10.1016/j.bios.2007.03.030. (link )


Beysserie, S., S. Aboud, S. Goodnick, T. Thornton and M. Saraniti. 2004. Full‐band particle‐based simulation of SOI and GOI MOSFETs. Physica Status Solidi b 241(10):297-2302. DOI: 10.1002/pssb.200404940. (link )

Wilk, S. J., M. Goryll, G. M. Laws, S. M. Goodnick and T. J. Thornton. 2004. Teflon™-coated silicon apertures for supported lipid bilayer membranes. Applied Physics Letters 85(15):3307. DOI: 10.1063/1.1805712. (link )


Chakraborty, P. S., M. R. McCartney, J. Li, C. Gopalan, M. Gilbert, S. M. Goodnick, T. J. Thornton and M. N. Kozicki. 2003. Electron holographic characterization of ultra-shallow junctions in Si for nanoscale MOSFETs. IEEE Transactions on Nanotechnology 2(2):102-109. DOI: 10.1109/TNANO.2003.812586. (link )

Gopalan, C., P. S. Chakraborty, J. Yang, T. Kim, Z. Wu, M. R. McCartney, S. M. Goodnick, M. N. Kozicki and T. Thornton. 2003. Shallow source/drain extensions for deep submicron MOSFETs using spin-on-dopants. IEEE Transactions on Electron Devices 50(5):1277-1283. DOI: 10.1109/TED.2003.813467. (link )

Goryll, M., S. Wilk, G. M. Laws, T. Thornton, S. Goodnick, M. Saraniti and R. S. Eisenberg. 2003. Silicon-based ion channel sensor. Superlattices and Microstructures 34(3-6):451-457. DOI: 0.1016/j.spmi.2004.03.041. (link )

Singisetti, U., M. R. McCartney, P. S. Chakraborty, S. M. Goodnick, M. N. Kozicki and T. J. Thornton. 2003. Two-dimensional electrical characterization of ultrashallow source/drain extensions for nanoscale MOSFETs. Superlattices and Microstructures 34(3-4):301-310. DOI: 10.1016/j.spmi.2004.03.020. (link )


Barker, J. M., R. Akis, D. K. Ferry, S. M. Goodnick, T. J. Thornton, D. D. Koleske and R. L. Henry. 2002. High-field transport studies of GaN. Physica B: Condensed Matter 314(1-4):39-41. DOI: 10.1016/S0921-4526(01)01453-3. (link )

Barker, J. M., R. Akis, T. J. Thornton, D. K. Ferry and S. M. Goodnick. 2002. High field transport studies of GaN. Physica Status Solidi A 190(1):263-270. DOI: 10.1002/1521-396X(200203)190:1<263::AID-PSSA263>3.0.CO;2-U. (link )

Yang, J., T. J. Thornton, S. M. Goodnick, M. N. Kozicki and J. Lyding. 2002. Buried channel silicon-on-insulator MOSFETs for hot-electron spectroscopy. Physica B: Condensed Matter 314(1-4):354-357. DOI: 10.1016/S0921-4526(01)01404-1. (link )


Gunther, A., M. Khoury, S. Milicic, D. Vasileska, T. Thornton and S. M. Goodnick. 2000. Transport in split-gate silicon quantum dots. Superlattices and Microstructures 27(5-6):373-376. DOI: 10.1006/spmi.2000.0844. (link )

Khoury, M., A. Gunther, S. Milicic, M. J. Rack, S. M. Goodnick, D. Vasileska, T. J. Thornton and D. K. Ferry. 2000. Single-electron quantum dots in silicon MOS structures. Applied Physics A 71:415-421. DOI: 10.1007/s003390000554. (link )

Conference Papers


Goodnick, S. M., J. P. Bird, D. K. Ferry, A. Gunther, M. Khoury, M. N. Kozicki, M. J. Rack, T. Thornton and D. Vasileska. 1999. Transport in split gate MOS quantum dot structures. Proceedings Ninth Great Lakes Symposium on VLSI. Ninth Great Lakes Symposium on VLSI. Ypsilanti, NI. (link )